Search results for "semiconductor-electrolyte junction"

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

2005

An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for thin (D ox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor-electrolyte junction (a-SC/EI) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb 2 O 5 /El interface in a large range (10 Hz-10 kHz) of frequency and electrode potential values. A modelling of experimental EIS data at different potentials and in the frequency range of 0.1 Hz-100 kHz is presented based on the theory of amorphous semiconductor and compared with the results of the fitting of the admittance data…